Datasheet Summary
N-CHANNEL POWER MOSFET
Features
BVDSS = 900V
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- Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 900V Lower RDS(ON): 1.247Ω (Typ.)
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RDS(ON) = 1.8Ω ID =...
