FDC642P_F085 Description
FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ.
FDC642P_F085 Key Features
- Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A
- Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A
- Fast switching speed
- Low gate charge(6.9nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick)
- RoHS pliant
- Qualified to AEC Q101