FDMC86265P Description
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A Very Low RDS-on Mid Voltage P-channel Silicon Technology Optimised for Low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. This product is optimised for fast...
FDMC86265P Key Features
- Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
- Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
- Very Low RDS-on Mid Voltage P-channel Silicon Technology
- This product is optimised for fast switching