FDMC86340ET80 Description
Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A High performance technology for extremely low rDS(on) Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for...
FDMC86340ET80 Key Features
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A
- Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- DC-DC Conversion
- RoHS pliant
- Continuous -Continuou