FDMS86163P Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS86163P Key Features
- Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
- Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
- Very low RDS-on mid voltage P-channel silicon technology
- This product is optimised for fast switching