FDPF3860T Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances LCD/LED/PDP TV Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D GDS G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. , Junction to...
FDPF3860T Key Features
- RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant