FDS8958A_F085 Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS8958A_F085 Key Features
- Q1: N-Channel
- Q2: P-Channel
- 5A, -30V
- Fast switching speed
- High power and handling capability in a widely
- Qualified to AEC Q101
- RoHS pliant