FQE10N20C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch...
FQE10N20C Key Features
- 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
- Low gate charge ( typical 20 nC)
- Low Crss ( typical 40.5 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability