FQPF7N65C Description
Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC),...
FQPF7N65C Key Features
- 7 A, 650 V, RDS(on).= 1.4 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 12 pF)
- 100% Avalanche Tested