H11AG2 Description
The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique.
H11AG2 Key Features
- High efficiency low degradation liquid epitaxial IRED
- Logic level patible, input and output currents, with CMOS and LS/TTL
- High DC current transfer ratio at low input currents
- Underwriters Laboratory (UL) recognized File #E90700