HUF76121S3S Description
HUF76121P3, HUF76121S3S Data Sheet January 2003 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the...
HUF76121S3S Key Features
- Logic Level Gate Drive
- 47A, 30V
- Ultra Low On-Resistance, rDS(ON) = 0.021Ω
- Temperature pensating PSPICE® Model
- Temperature pensating SABER© Model
- Thermal Impedance SPICE Model
- Thermal Impedance SABER Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature