HUF76131SK8 Description
HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very...
HUF76131SK8 Key Features
- Logic Level Gate Drive
- 10A, 30V
- Ultra Low On-Resistance, rDS(ON) = 0.013Ω
- Temperature pensating PSPICE® Model
- Thermal Impedance SPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”