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HUF76132SK8 Description

HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits...

HUF76132SK8 Key Features

  • Logic Level Gate Drive
  • 11.5A, 30V
  • Simulation Models
  • Temperature pensated PSPICE® and SABER³™ Electrical Models
  • SPICE and SABER Thermal Impedance Models
  • fairchildsemi
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Transient Thermal Impedance Curve vs Board Mounting Area
  • Related Literature