MOCD211-M Description
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
MOCD211-M Key Features
- U.L. Recognized (File #E90700, Volume 2)
- VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M)
- Minimum BVCEO of 30 Volts Guaranteed
- Standard SOIC-8 Footprint, with 0.050" Lead Spacing
- patible with Dual Wave, Vapor Phase and IR Reflow Soldering
- High Input-Output Isolation of 2500 VAC(rms) Guaranteed
- pact Dual Channel Optocoupler