SGU20N40L Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in parison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications.
SGU20N40L Key Features
- High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20