Download TIP102 Datasheet PDF
TIP102 page 2
Page 2
TIP102 page 3
Page 3

TIP102 Description

TIP102 NPN Epitaxial Silicon Darlington Transistor December 2014 TIP102 NPN Epitaxial Silicon Darlington Transistor.

TIP102 Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors
  • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum)
  • Collector-Emitter Sustaining Voltage
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use
  • plementary to TIP107