FP100 - HIGH PERFORMANCE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	FP100
Manufacturer	Filtronic Compound Semiconductors
File Size	32.67 KB
Description	HIGH PERFORMANCE PHEMT
Datasheet	FP100 Datasheet
Additional preview pages of the FP100 datasheet.

Product details

Description

AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The FP100

Features

S.
14 dBm P-1dB at 12 GHz.
9 dB Power Gain at 12 GHz.
3.0 dB Noise Figure at 12 GHz.

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Published: Apr 1, 2005 |