FP100 Datasheet | Filtronic Compound Semiconductors

PRELIMINARY DATA SHEET HIGH PERFORMANCE PHEMT - Features - 14 d Bm P-1d B at 12 GHz - 9 d B Power Gain at 12 GHz - 3.0 d B Noise Figure at 12 GHz - DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (Al Ga As/In Ga As) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP100 Features Si3N4 passivation. Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telemunication applications. - ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C Parameter Output Power @ 1 d B pression Power Gain @ 1 d B pression Maximum Available Gain Noise Figure Power-Added Efficiency Saturated Drain-Source Current Transconductance Pinch-Off Voltage Gate-Drain Breakdown Voltage Magnitude Gate-Source Breakdown Voltage Magnitude Gate-Source Leakage Current Magnitude Symbol P1d B G1d B MAG NF η IDSS GM VP |VBDGD| |VBDGS| |IGSL | Test Conditions f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS; POUT = 15.5 d Bm VDS = 2 V; VGS = 0 V VDS = 2 V; VGS = 0 V VDS = 2 V; IDS = 1 m A IGS = 1 m A IGS = 1 m A VGS = -5 V 20 15 15 -0.50 8 7 10.5 10 4 10 20 -2.5 Min 13 8 14.5 Typ 14 9 15.5 3.0 25 30 Max Units d Bm d B d B d B % m A m S V V V µA Phone: (408) 988-1845 Fax: (408) 970-9950 http:// .filss. Email: sales@filss. Revised: 07/18/01 PRELIMINARY DATA SHEET HIGH PERFORMANCE PHEMT - REMENDED CONTINUOUS OPERATING LIMITS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current RF Input Power Channel...