FP100 - HIGH PERFORMANCE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	FP100
Manufacturer	Filtronic Compound Semiconductors
File Size	32.67 KB
Description	HIGH PERFORMANCE PHEMT
Datasheet	FP100 Datasheet
Additional preview pages of the FP100 datasheet.

FP100 Product details

Description

AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an

Features

S.
14 dBm P-1dB at 12 GHz.
9 dB Power Gain at 12 GHz.
3.0 dB Noise Figure at 12 GHz.

📁 Similar Datasheet

FP1000 - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)
FP1000A - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)
FP1005R - High current power inductors (EATON)
FP1006 - High current power inductors (EATON)
FP1007 - High current power inductors (EATON)
FP1007R6 - High current power inductors (EATON)
FP1009 - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)
FP1009A - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)
FP100F - Spice Model (VMI)
FP100R06KE3 - IGBT (eupec GmbH)

Other Datasheets by Filtronic Compound Semiconductors

FP1510SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Published: Apr 1, 2005 |