FP1510SOT89 Description
AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
FP1510SOT89 Key Features
- 28 dBm Output Power at 1-dB pression at 1.8 GHz
- 19 dB Power Gain at 1.8 GHz
- 1.0 dB Noise Figure
- 45 dBm Output IP3 at 1.8 GHz
- 50% Power-Added Efficiency
- DESCRIPTION AND