FP1510SOT89
FEATURES
- 28 d Bm Output Power at 1-d B pression at 1.8 GHz
- 19 d B Power Gain at 1.8 GHz
- 1.0 d B Noise Figure
- 45 d Bm Output IP3 at 1.8 GHz
- 50% Power-Added Efficiency
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
- DESCRIPTION
AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (Al Ga As/In Ga As) pseudomorphic High Electron Mobility Transistor (p HEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FP1510 also features
Si3N4 passivation and is available in die form or in other packages. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems.
- ELECTRICAL SPECIFICATIONS @ TAmbient =...
