FP1510SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	FP1510SOT89
Manufacturer	Filtronic Compound Semiconductors
File Size	139.21 KB
Description	LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Datasheet	FP1510SOT89 Datasheet
Additional preview pages of the FP1510SOT89 datasheet.

FP1510SOT89 Product details

Description

AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography.

Features

S.
28 dBm Output Power at 1-dB Compression at 1.8 GHz.
19 dB Power Gain at 1.8 GHz.
1.0 dB Noise Figure.
45 dBm Output IP3 at 1.8 GHz.
50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH.

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Published: Apr 1, 2005 |