Datasheet Details
| Part number | FP1510SOT89 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 139.21 KB |
| Description | LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT |
| Datasheet |
 FP1510SOT89 Datasheet
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General Description
AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography.
Key Features
- S.
- 28 dBm Output Power at 1-dB Compression at 1.8 GHz.
- 19 dB Power Gain at 1.8 GHz.
- 1.0 dB Noise Figure.
- 45 dBm Output IP3 at 1.8 GHz.
- 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH.