FP4050 - 2-WATT POWER PHEMT

Description

The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate.

Features

ES.
48 dBm IP3 at 2 GHz.
34 dBm P-1dB at 2 GHz.
14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X).

Filtronic Compound Semiconductors

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Datasheet Details

Part number	FP4050
Manufacturer	Filtronic Compound Semiconductors
File Size	39.57 KB
Description	2-WATT POWER PHEMT
Datasheet	FP4050 Datasheet
Additional preview pages of the FP4050 datasheet.

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PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT • FEATURES ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.

Published: Apr 1, 2005 |