FP4050
FEATURES
- 48 d Bm IP3 at 2 GHz
- 34 d Bm P-1d B at 2 GHz
- 14 d B Power Gain at 2 GHz
DRAIN BOND PAD SOURCE BOND PAD (2X)
- DESCRIPTION
AND APPLICATIONS
GATE BOND PAD
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (Al Ga As/In Ga As) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features
Si3N4 passivation. Typical applications include mercial and military high-performance power amplifiers, including SAT uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and ISM band spread spectrum applications.
- ELECTRICAL SPECIFICATIONS @ TAmbient = 2 2 ± 3 °C
Parameter Output Power @ 1 d B pression Power Gain @ 1 d B pression Saturated Drain-Source Current...
