FP4050 Description
AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
FP4050 Key Features
- 48 dBm IP3 at 2 GHz
- 34 dBm P-1dB at 2 GHz
- 14 dB Power Gain at 2 GHz
- DESCRIPTION AND