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FP4050 Datasheet 2-watt Power Phemt

Manufacturer: Filtronic Compound Semiconductors

Overview: PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT •.

General Description

AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.

The FP4050

Key Features

  • ES.
  • 48 dBm IP3 at 2 GHz.
  • 34 dBm P-1dB at 2 GHz.
  • 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X).

FP4050 Distributor & Price

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