FP750SOT343 Datasheet | Filtronic Compound Semiconductors

FEATURES - 0.5 d B Noise Figure at 2 GHz - 21 d Bm P-1d B 2 GHz - 17 d B Power Gain at 2 GHz - 33 d Bm IP3 at 2 GHz - 45% Power-Added-Efficiency - DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged Al Ga As/In Ga As/Al Ga As pseudomorphic high electron mobility transistor (p HEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The FP750’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package. The FP750SOT343 is designed for mercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for PCS and GSM base station front-ends. - ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Saturated Drain-Source Current Power at 1-d B pression Power Gain at 1-d B pression Power-Added Efficiency Noise Figure Symbol IDSS P-1d B G-1d B PAE NF Test Conditions VDS = 2 V; VGS = 0 V f=2GHz; VDS = 3.3 V; IDS = 110m A f=2GHz; VDS = 3.3 V; IDS = 110m A f=2GHz; VDS = 3.3 V; IDS = 110m A; POUT = 21 d Bm f=2GHz; VDS = 3.3V; 40m A f=2GHz; VDS = 3.3V; IDS = 60m A f=2GHz; VDS = 3.3V; 110m A VDS = 3.3V; IDS = 110m A VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 2 m A IGS = 2 m A IGD = 2 m A Min 180 20 16 Typ 220 21 17 45 0.4 0.5 0.7 33 220 5 -1.2 12 13 Max 265 Units m A d Bm d B % d B d B d B d Bm m S µA V V V Output Third-Order Intercept Point Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude IP3 GM IGSO VP |VBDGS| |VBDGD| 10 10 Phone: (408) 988-1845 Fax: (408) 970-9950 http:// .filss. Revised: 2/01/02 Email: sales@filss. PRELIMINARY DATA...