FP750SOT343 Description
AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The FP750’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package...
FP750SOT343 Key Features
- 0.5 dB Noise Figure at 2 GHz
- 21 dBm P-1dB 2 GHz
- 17 dB Power Gain at 2 GHz
- 33 dBm IP3 at 2 GHz
- 45% Power-Added-Efficiency
- DESCRIPTION AND