Datasheet Details
| Part number | FP750SOT343 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 55.20 KB |
| Description | PACKAGED LOW NOISE/ MEDIUM POWER PHEMT |
| Datasheet |
 FP750SOT343 Datasheet
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General Description
AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range.
Key Features
- S.
- 0.5 dB Noise Figure at 2 GHz.
- 21 dBm P-1dB 2 GHz.
- 17 dB Power Gain at 2 GHz.
- 33 dBm IP3 at 2 GHz.
- 45% Power-Added-Efficiency.