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FPDA200V - HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

Description

AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

  • S.
  • 21 dBm Output Power at 1-dB Compression at 18 GHz.
  • 12.5 dB Power Gain at 18 GHz.
  • 55% Power-Added Efficiency.
  • Source Vias to Backside Metallization FPDA200V HIGH.

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Datasheet Details

Part number FPDA200V
Manufacturer Filtronic Compound Semiconductors
File Size 57.52 KB
Description HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
Datasheet download datasheet FPDA200V Datasheet

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Full PDF Text Transcription

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Preliminary Data Sheet • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS GATE BOND PAD DRAIN BOND PAD DIE SIZE: 15.6X13.2 mils (395x335 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.1X3.1 mils (80x80 µm) • DESCRIPTION AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
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