FPDA200V Description
AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
FPDA200V Key Features
- 21 dBm Output Power at 1-dB pression at 18 GHz
- 12.5 dB Power Gain at 18 GHz
- 55% Power-Added Efficiency
- Source Vias to Backside Metallization
- DESCRIPTION AND