Datasheet Details
| Part number | LP3000P100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 47.90 KB |
| Description | PACKAGED 2W POWER PHEMT |
| Datasheet |
 LP3000P100 Datasheet
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General Description
AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µ m x 3000 µ m Schottky barrier gate, defined by electron-beam photolithography.
Key Features
- S.
- 33 dBm Output Power at 1-dB Compression at 15 GHz.
- 8 dB Power Gain at 15 GHz.
- 60% Power-Added Efficiency LP3000P100.