LP3000P100 Overview
AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 3000 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
LP3000P100 Key Features
- 33 dBm Output Power at 1-dB pression at 15 GHz
- 8 dB Power Gain at 15 GHz
- 60% Power-Added Efficiency
- DESCRIPTION AND