LP6836SOT343 Description
AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography. The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for...
LP6836SOT343 Key Features
- 0.5 dB Noise Figure at 2 GHz
- 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
- 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
- 70% Power-Added-Efficiency
- DESCRIPTION AND