LP6836SOT343
FEATURES
- 0.5 d B Noise Figure at 2 GHz
- 19 d Bm P-1d B 2 GHz, 19 d Bm at 6 GHz
- 20 d B Power Gain at 2 GHz, 10 d B at 6 GHz
- 70% Power-Added-Efficiency
- DESCRIPTION
AND APPLICATIONS The LP6836SOT343 is a packaged Al Ga As/In Ga As/Al Ga As pseudomorphic high electron mobility transistor (p HEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography. The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surfacemount package. The LP6836SOT343 is designed for mercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.
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