Datasheet Details
| Part number | LP6836SOT343 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 67.10 KB |
| Description | PACKAGED MEDIUM POWER PHEMT |
| Download | LP6836SOT343 Download (PDF) |
|
|
| Part number | LP6836SOT343 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 67.10 KB |
| Description | PACKAGED MEDIUM POWER PHEMT |
| Download | LP6836SOT343 Download (PDF) |
|
|
|
AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range.
It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography.
The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surfacemount package.
PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT.
| Part Number | Description |
|---|---|
| LP6836 | MEDIUM POWER PHEMT |
| LP6836P100 | Packaged 0.25W Power PHEMT |
| LP6836P70 | PACKAGED MEDIUM POWER PHEMT |
| LP6872 | 0.5W POWER PHEMT |
| LP6872P100 | Packaged 0.5W Power PHEMT |