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LP6836SOT343 - PACKAGED MEDIUM POWER PHEMT

Description

AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range.

Features

  • S.
  • 0.5 dB Noise Figure at 2 GHz.
  • 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz.
  • 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz.
  • 70% Power-Added-Efficiency.

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Datasheet preview – LP6836SOT343

Datasheet Details

Part number LP6836SOT343
Manufacturer Filtronic Compound Semiconductors
File Size 67.10 KB
Description PACKAGED MEDIUM POWER PHEMT
Datasheet download datasheet LP6836SOT343 Datasheet
Additional preview pages of the LP6836SOT343 datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography. The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surfacemount package.
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