LP7612P70 Description
AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for...
LP7612P70 Key Features
- 20 dBm Output Power at 1-dB pression at 18 GHz
- 7.5 dB Power Gain at 18 GHz
- 16 dB Small Signal Gain at 2 GHz
- 0.8 dB Noise Figure at 2 GHz
- DESCRIPTION AND