LPS200P70 Datasheet | Filtronic Compound Semiconductors

PACKAGED LOW NOISE PHEMT - Features - 0.7 dB Noise Figure at 12 GHz - 12 dB Associated Gain at 12 GHz - 0.6 dB Noise Figure at 2 GHz - 14 dB Associated Gain at 2 GHz - Low DC Power Consumption - DESCRIPTION AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPS200’s active areas are passivated...