FMS2003QFN-1 Datasheet | Filtronic

Features : - - - - - - - 3x3x0.9mm Packaged p HEMT Switch Ni Pd Au finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels High isolation: >30d B at 0.9GHz Low Insertion loss: 0.5d B at 0.9GHz Low control current Functional Schematic RF1 RF2 RF3 RF4 Description and Applications: The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary. Electrical Specifications: Parameter Insertion Loss Return Loss (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions - 1.0 GHz 1.0 - 2.0 GHz 0.5 - 2.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 1 GHz, Pin = +35 d Bm, 100% Duty Cycle 2 GHz, Pin = +33d Bm, 100% Duty Cycle 1 GHz, Pin = +35 d Bm, 100% Duty Cycle 2 GHz, Pin = +33d Bm, 100% Duty Cycle 10% to 90% RF 90% to 10% RF 0.5 - 1.0 GHz 1.0 - 2.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz Tx1 836Hz Tx2 837MHz +21d Bm Rx1 880MHz - 25d Bm Tx1 1879.5MHz Tx2 1880.5MHz +21d Bm,Rx1 1960MHz - 25d Bm +35d Bm RF input @1GHz Min Typ <0.62 <0.65 20 >30 >26 -69 -67 -69 -70 <0.15 <0.06 38 38 >65 >62 >110 Max Units d B d B d B d B d B d Bc d Bc d Bc d Bc µs µs d Bm Isolation 2nd Harmonic Level 3rd Harmonic Level Switching speed : Trise,...