FMS2017QFN Datasheet | Filtronic

Features : 3x3x0.9mm Packaged p HEMT Switch Suitable for Single-band WLAN 802.11b/g Applications - Excellent low control voltage performance - Very low Insertion loss typ. 0.6d B at 2.5GHz - High isolation typ. 23d B at 2.5GHz - Filtronic Advanced Ga As p HEMT Technology - - Functional Schematic V4 TX / RF1 V3 ANT1 RF3 ANT2 RF4 V1 RX / RF2 V2 Description and Applications: The FMS2017QFN is a low loss, single band Gallium Arsenide antenna diversity switch designed for use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance, optimised for switch applications. The FMS2017QFN is designed for use in 802.11b/g WLAN modules. Electrical Specifications: Parameter Insertion Loss (All Paths) Isolation (All Paths) Return Loss P0.1d B 2nd Harmonic Level 3rd Harmonic Level Switching speed (TAMBIENT = 25°C,Vctrl = 0V/(2.4V,+3.3V), ZIN = ZOUT = 50Ω) Conditions 2.5GHz, Small Signal 2.5GHz, Small Signal 2.5GHz, Small Signal 2.5GHz Control Voltage 3.0V 2.4GHz, Pin = 32d Bm, Vctrl =2.4V 2.4GHz, Pin = 32d Bm, Vctrl =2.4V Vctrl=2.4V, Pin=20d Bm Min Typ 0.6 23 20 >33 -65 -65 20 Max Units d B d B d B d Bm d Bc d Bc n S Note: External DC blocking capacitors are required on all RF ports (typ: 47p F) All unused ports terminated in 50Ω. Preliminary specifications subject to change without notice Filtronic pound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs. Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi. Website: .filtronic.co.uk/semis Preliminary Data Sheet 2.1 Absolute Maximum Ratings: Parameter Max Input Power Control Voltage Operating Temperature Storage Temperature Symbol Pin Vctrl Toper Tstor Absolute Maximum +38d Bm +5V -40°C to +100°C -55°C to...