Filtronic FP2250QFN
The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.| Part No. | FP2250QFN |
|---|---|
| Datasheet | FP2250QFN Download |
| Manufacturer |  Filtronic |
| Description | PACKAGED LOW NOISE / HIGH LINEARITY PHEMT |
| Buy | Stock & Price |
FEATURES
♦ 29 dBm Output Power at 1-dB Compression ♦ 17 dB Power Gain at 2 GHz ♦ 1.0 dB Noise Figure at 2 GHz ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency●
DESCRIPTION
ANDAPPLICATIONS
The epitaxial structure and processing have been optimized for reliable highpower applications. The FP2250’s active areas are passivated with Si3N4, and the QFN package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems up to 10 GHz.ELECTRICAL SPECIFICATIONS
@ TAmbient = 25°C Parameter Saturated Drain-Source Current FP2250QFN-1 FP2250QFN-2 Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain B...
