FP2250QFN Datasheet | Filtronic

.. Preliminary Data Sheet PACKAGED LOW NOISE, HIGH LINEARITY PHEMT - Features - 29 d Bm Output Power at 1-d B pression - 17 d B Power Gain at 2 GHz - 1.0 d B Noise Figure at 2 GHz - 42 d Bm Output IP3 - 50% Power-Added Efficiency - DESCRIPTION AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (Al Ga As/In Ga As) pseudomorphic High Electron Mobility Transistor (p HEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable highpower applications. The FP2250’s active areas are passivated with Si3N4, and the QFN package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems up to 10 GHz. ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Saturated Drain-Source Current FP2250QFN-1 FP2250QFN-2 Power at 1-d B pression Power Gain at 1-d B pression Power-Added Efficiency Noise Figure Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude All RF data tested at 2.0 GHz Symbol IDSS Test Conditions VDS = 2 V; VGS = 0 V 560 706 27 16 635 770 29 17 50 1.0 42 705 850 m A m A d Bm d B % d B d Bm m A m S µA V V V Min Typ Max Units - P-1d B G-1d B PAE NF IP3 IMAX GM IGSO VP VBDGS VBDGD VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5V; IDS = 50% IDSS VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 11 m A IGS = 11 m A IGD = 11 m A 840 550 -2.0 -10...