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FP2250QFN - PACKAGED LOW NOISE / HIGH LINEARITY PHEMT

Description

AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

Features

  • ES.
  • 29 dBm Output Power at 1-dB Compression.
  • 17 dB Power Gain at 2 GHz.
  • 1.0 dB Noise Figure at 2 GHz.
  • 42 dBm Output IP3.
  • 50% Power-Added Efficiency.

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Datasheet Details

Part number FP2250QFN
Manufacturer Filtronic
File Size 233.15 KB
Description PACKAGED LOW NOISE / HIGH LINEARITY PHEMT
Datasheet download datasheet FP2250QFN Datasheet

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www.DataSheet4U.com Preliminary Data Sheet FP2250QFN PACKAGED LOW NOISE, HIGH LINEARITY PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression ♦ 17 dB Power Gain at 2 GHz ♦ 1.0 dB Noise Figure at 2 GHz ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable highpower applications.
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