FPM2750QFN Description
The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation.
FPM2750QFN Applications
- Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs