FPM2750QFN Datasheet | Filtronic

FEATURES : - - - - - - - Balanced low noise amplifier module Excellent Noise figure: 0.4d B at 1850MHz Low drive current: 40m A typical (3.0V) bined IP3: 36d Bm (100m A) bined P1d B: 23d Bm (100m A) Small footprint: 4mm x 4mm x 0.9mm QFN Ro HS pliant: (Directive 2002/95/EC) Datasheet v2.5 PACKAGE: GENERAL DESCRIPTION : The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (p HEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation. TYPICAL APPLICATIONS: - - Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated): PARAMETER Noise Figure SYMBOL CONDITIONS VDS = 3.0 V; IDS = 40m A VDS = 4.0 V; IDS = 100m A 0.4 0.6 32 UNITS d B Output IP3 in balanced mode SSG in balanced mode IP3 VDS = 3.0 V; IDS = 40m A VDS = 4.0 V; IDS = 100m A 33 d Bm 36 18.5 d B VDS = 3.0 V; IDS = 40m A VDS = 4.0 V; IDS = 100m A 17.5 20 21 d Bm P1d B in balanced mode P1d B VDS = 3.0 V; IDS = 40m A VDS = 4.0 V; IDS = 100m A 21.5 23.5 19.0 19.5 17.5 17.5 d Bm d B Small Signal Gain VDS = 3.0 V; IDS = 40m A VDS = 4.0 V; IDS = 100m A Power at 1d B Gain...