First Silicon 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
FEATURES
* Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 2SB688 1 TO-3PABSOLUTE MAXIMUM RATINGS
(Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L RATINGS -120 -120 -5 -10 -1 80 150 -40 ~ +150 UNIT V V V A A W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO V(BR)CEO hFE VCE(sat) VBE fT Cob TEST CONDITIONS VCB = -120V, IE = 0 VEB = -5V, IC = 0