FTC2412K Datasheet | First Silicon

SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon - We declare that the material of product pliance with Ro HS requirements. ORDERING INFORMATION Device Marking Shipping FTC2412K-Q FTC2412K-R FTC2412K-S BQ BR G1F 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 1 2 SOT- 23 MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Collector power dissipation Junction temperature Storage temperature Symbol Value 50 60 7.0 150 0.2 150 -55 ~ +150 Unit V V V m Adc W C C 1 BASE 3 COLLECTOR VCEO VCBO VEBO IC PC Tj Tstg 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.) Characteristic Collector- Emitter Breakdown Voltage (IC = 1 m A) Emitter- Base Breakdown Voltage (IE = 50 µA) Collector- Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 m A / 5m A) DC current transfer ratio h FE (VCE = 6 V, IC = 1m A) Transition frequency (VCE = 12 V, IE = - 2m A, f =30MHz ) Output capacitance (VCB = 12 V, IE = 0A, f =1MHz ) Symbol V(BR)CEO V(BR)EBO V(BR)CBO ICBO IEBO VCE(sat) h FE f T Cob Min Typ Max Unit 50 7 60 120 - 180 2.0 0.1 0.1 0.4 560 3.5 V V V μA μA V MHz p F h FE values are classified as follows: - h EF 120~270 180~390 270~560...