FTK6905P
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
TO-220 Pin Configuration
BVDSS -60V
RDSON 48mΩ
ID -20A
Features
- -60V,-20A, RDS(ON) =48mΩ@VGS = -10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- Motor Drive
- Power Tools
- LED Lighting
3 2
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)
Symbol VDS VGS
IDM EAS IAS
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) Drain Current
- Continuous (TC=100℃) Drain Current
- Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2...
