First Silicon MBRD10200CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity ProtectionAPPLICATIONS
Q AI CJ BD H FF 123 1 ANODE 2 CATHODE 3 ANODE E DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 D 1 50 ± 0 2 O E 2 70 ± 0 2 F 2 30 ± 0 1 H 1 00 MAX LI J 2 30 ± 0 2 05± 01 L 0 50 ± 0 10 O 16±02 Q 0 95 MAX 1 22 3 TO-252 (D-PAK)MAXIMUM RATINGS
( Ta=25℃ unless otherwise noted ) Symbol Parameter Value VRRM VRWM VR(RMS) IO IFSM Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Average rectified output current Non-repetitive peak forward surge current 8.3ms half sine wave 200 140 10 125 PD RΘJA Tj Tstg Power dissipation Thermal resistance from junct