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SEMICONDUCTOR
TECHNICAL DATA
SIF7N65D
N-CHANNEL POWER MOSFET
●FEATURES
LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●APPLICATION
ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODEPOWERSUPPLY
●Absolute Maximum Ratings (Tc=25 C)
PARAMETER Drain-source Voltage gate-source Voltage
SYMBOL VDS VGS
Continuous Drain Current
ID
(TC=25℃)
Continuous Drain Current
ID
(TC=100℃)
Drain Current -Pulsed ①
IDM
Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature
TSTG
Single Pulse Avalanche Energy ②
EAS
VALUE 650 ± 30 7.0
3.2 28 50 150 -55-150 230
UNIT V V A
A A W C C mJ
VDS=650V RDS(ON)=1.1Ω ID=7.