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FT6264 - ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS

General Description

The FT6264 is a 65,536-bit ultra high-speed static RAM organised as 8K x 8.

The CMOS memory requires no clocks or refreshing and has equal access and cycle times.

Inputs are fully TTL-compatible.

Key Features

  • Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times).
  • 8/10/12/15/20/25/35/70/100 ns (Commercial).
  • 10/12/15/20/25/35/70/100 ns(Industrial).
  • 12/15/20/25/35/45/70/100 ns (Military) Low Power Operation Output Enable and Dual Chip Enable Control Functions Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 µA Typical Current (FT6264L Military).

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Datasheet Details

Part number FT6264
Manufacturer Force Technologies
File Size 743.99 KB
Description ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS
Datasheet download datasheet FT6264 Datasheet

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FT6264L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military) Low Power Operation Output Enable and Dual Chip Enable Control Functions Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 µA Typical Current (FT6264L Military) DESCRIPTION The FT6264 is a 65,536-bit ultra high-speed static RAM organised as 8K x 8. The CMOS memory requires no clocks or refreshing and has equal access and cycle times. Inputs are fully TTL-compatible. The RAM operates from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained with supply voltages down to 2.0V. Current drain is typically 10 µA from a 2.0V supply.