FMD5N50E5 Overview
： FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
FMD5N50E5 Key Features
- Fast body diode eliminates the need for external diode in ZVS
FMD5N50E5 Applications
- Lower Gate charge results in simpler drive requirements
- Higher Gate voltage threshold offers improved noise immunity