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FMD5N50E5
Silicon N-Channel Power MOSFET
General Description：
FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
VDSS ID Trr RDS(ON)Typ
500
V
5
A
85
ns
1.25
Ω
Features ：
Fast body diode eliminates the need for external diode in ZVS applications.
FMD5N50E5 Datasheet
