FMD5N50E5
Description
： FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
- Fast body diode eliminates the need for external diode in ZVS applications
- Lower Gate charge results in simpler drive requirements
- Higher Gate voltage threshold offers improved noise immunity
Applications
- Motor Control applications
