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DW01M - One Cell Lithium-ion/Polymer Battery Protection

Datasheet Summary

Description

The DW01M battery protection IC with built-in N-MOSFET is designed to protect lithium-ion /polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/or overcurrent for one-cell lithium-ion/polymer battery powered systems, such as cellular phones.

Features

  • z Built-in N-MOSFET of low turn-on resistance. z Reduction in Board Size due to Miniature Package TSSOP-8 or SOT-23-6 or DFN-5. z Protection IC:.
  • Ultra-Low Quiescent Current at 3μA (Vcc=3.9V).
  • Overcharge Protection Voltage 4.3V ± 50mV (DW01MC-X).
  • Overcharge Protection Voltage 4.28V ± 70mV (DW01MC-XA).
  • Overdischarge Protection Voltage 2.4V ± 100mV (DW01MC-X, DW01MC-XA).
  • Overcurrent Protection Voltage 150mV ± 30mV (DW01MC-X, DW01MC-XA).
  • Auto R.

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Datasheet preview – DW01M

Datasheet Details

Part number DW01M
Manufacturer Fortune
File Size 1.09 MB
Description One Cell Lithium-ion/Polymer Battery Protection
Datasheet download datasheet DW01M Datasheet
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REV. 1.9 DW01M-DS-19_EN May 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET Fortune Semiconductor Corporation 23F., No.29-5,Sec. 2, Zhongzheng E. Rd. Danshui Dist, New Taipei City 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874 www.ic-fortune.com DW01M For RefPerrFoepOnecRrteTieUOsnNlEy' This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.9 2/17 DW01M For RefPerrFoepOnecRrteTieUOsnNlEy' 1.
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