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FS312MH - One Cell Lithium-ion/Polymer Battery Protection

Datasheet Summary

Description

The FS312MH battery protection IC with built-in N-MOSFET is designed to protect lithium-ion /polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/ or overcurrent for one-cell lithium-ion/polymer battery powered systems, such as cellular phones.

Features

  • z Built-in N-MOSFET of low turn-on resistance. z Reduction in Board Size due to Miniature Package SOT-23-6 or TSSOP-8. z Protection IC：.
  • Ultra-Low Quiescent Current at 3μA (Vcc=3.9V).
  • Overcharge Protection Voltage 4.25V ± 30mV.
  • Overdischarge Protection Voltage 2.9V ± 100mV.
  • Overcurrent Protection Voltage 150mV ± 30mV z MOSFET：.
  • Rss(ON) ＜ 40mΩ (VGS = 3.7V , ID = 1A) (FS312MH-T).
  • Rss(ON) ＜ 50mΩ (VGS = 3.7V , ID = 1A) (FS312MH-S) Rev. 1.1 3/1.

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Datasheet Details

Part number FS312MH
Manufacturer Fortune
File Size 1.05 MB
Description One Cell Lithium-ion/Polymer Battery Protection
Datasheet download datasheet FS312MH Datasheet
Additional preview pages of the FS312MH datasheet.

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Full PDF Text Transcription

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REV. 1.1 FS312MH-DS-11_EN MAY 2013 For RReDfeoecirpeNinoetcnte:CoOpnlyy Datasheet FS312MH One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET Fortune Semiconductor Corporation 23F,No. 29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com FS312MH For RReDfeoecirpeNinoetcnte:CoOpnlyy This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 2/16 For RReDfeoecirpeNinoetcnte:CoOpnlyy FS312MH 1.
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