3DA3807 - SILICON NPN TRANSISTOR

Product Overview

Part number	3DA3807
Manufacturer	Foshan Eming Electronics
File Size	222.85 KB
Description	SILICON NPN TRANSISTOR
Datasheet	3DA3807 Datasheet
Additional preview pages of the 3DA3807 datasheet.

Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICM PC PC(TC=25℃) Tj Tstg 30 25 15 2.0 4.0 1.2 15 150 -55～150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) fT Cob VCE(sat) VBE(sat) ton tstg tf IC=10μA IE=0 IC=1.0mA REB=∞ IE=10μA IC=0 VCB=20V IE=0 VEB=10V IC=0 VCE=5.0V IC=500.

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Published: Dec 24, 2016 |