Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
Features
- ay Inductance.
- Ground Plane.
- Low Leakage Inductance Current Transformer
-.
- +
RG VGS.
- dv/dt controlled by RG.
- ISD controlled by Duty Factor "D".
- D. U. T. - Device Under Test
+ VDD.
- Reverse Polarity of D. U. T for P-Channel
http://www. DataSheet4U. net/
Driver Gate Drive P. W. Period D=
P. W. Period
[VGS=10V ].
- D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recov.