MCN5802B - N-Channel 20-V (D-S) MOSFET

Datasheet Summary

Features

Low rDS(on) trench technology.
Low thermal impedance.
Fast switching speed Typical.

FreesCale

📥 Download Datasheet

Datasheet Details

Part number	MCN5802B
Manufacturer	FreesCale
File Size	529.88 KB
Description	N-Channel 20-V (D-S) MOSFET
Datasheet	MCN5802B Datasheet
Additional preview pages of the MCN5802B datasheet.

📁 Similar Datasheet

MCNA150PD2200YB - High Voltage Thyristor / Diode Module (IXYS)
MCNA180PD2200YB - High Voltage Thyristor / Diode Module (IXYS)
MCNA220P2200YA - High Voltage Thyristor (IXYS)
MCNA55P2200TA - High Voltage Thyristor (IXYS)
MCNA650PD2200CB - High Voltage Thyristor / Diode Module (IXYS)
MCNA75PD2200TB - High Voltage Thyristor/Diode (IXYS)
MCNA95PD2200TB - High-Voltage Thyristor/Diode (IXYS)

Other Datasheets by FreesCale

MCN7702 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

Freescale AON5802B/ MCN5802B N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = 4.5V 24 @ VGS = 2.5V 39 @ VGS = 1.8V VDS (V) 20 ID(A) 7.1 6.5 5.1 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 7.1 ID Continuous Drain Current a TA=70°C 5.8 IDM Pulsed Drain Current b 40 a I 2.1 Continuous Source Current (Diode Conduction) S T =25°C 1.

Published: Aug 14, 2013 |