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MCN5802B - N-Channel 20-V (D-S) MOSFET

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

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MCN7702 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale AON5802B/ MCN5802B N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = 4.5V 24 @ VGS = 2.5V 39 @ VGS = 1.8V VDS (V) 20 ID(A) 7.1 6.5 5.1 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 7.1 ID Continuous Drain Current a TA=70°C 5.8 IDM Pulsed Drain Current b 40 a I 2.1 Continuous Source Current (Diode Conduction) S T =25°C 1.