33099 Datasheet | Freescale Semiconductor

Features - External High-Side MOSFET Control of a Ground-Referenced Field Winding - LRC Active During Initial Start - Vset at ±0.1 V @ 25°C - <0.1 V Variation Over Engine Speeds of 2,000 to 10,000 RPM - <0.2 V Variation Over 10% to 95% of Maximum Field Current - Controlled MOSFET and Field Flyback Diode Recovery Characteristics for Minimum RFI - Trimmed Devices Available at 14.6 V and 14.8 V (typical) Vset - Pb-Free Packaging Designated by Suffix Code EG VOLTAGE REGULATOR DW SUFFIX EG SUFFIX (PB-FREE) 98ASB42567B 16-PIN SOICW ORDERING INFORMATION Device MC33099DW/R2 16 SOICW MC33099CDW/R2 -40°C to 125°C MCZ33099EG/R2 MCZ33099CEG/R2 16 SOICW (Pb-FREE) Temperature Range (TA) Package PHASE GATE SOURCE PHASE FILTER FIELD WINDING IGN LAMP DRAIN BAT REMOTE LRC1 LRC2 AGND GND IGNITION SWITCH CHASSIS Figure 1. 33099 Simplified Application Diagram © Freescale Semiconductor, Inc., 2007. All rights reserved. BATT REMOTE V rem V rs CB1 V DD Regulator 0.6 V V l Local V Local ls Sense LB C rs V o RF Low Pass S1 R4 R5 Cf FB V fb Bandgap Reference V DD V ref (OTC) 1.25 V (2.0 V) UV C uv 1.25 V LD R3 S2 V hvl C ph PHASE FILTER CF 1.25 V F1 F2 DAC V dac Over Voltage Detect C dc A N D 1 C ign 1.25V V Tigm Drain Polling Iign Cds LAMP DRAIN OR1 OV Ign Delay IGN Batt V Tdsc (5.0 V) Internal V reg and Bias Current Vbat MC33099 Charge Pump Regulator Vg lpu MTB36N06E R1 R2 CB2 Min Duty Cycle Gate Polling Css A N D 4 Batt S3 GATE Field Z1 PHASE lpd V Tssc SOURCE Ignition To Logic 4...