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Freescale Semiconductor Technical Data
Document Number: A2I20H060N Rev. 0, 2/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
1800 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.65 Vdc, VPGroSb2aBb=ilit1y.3onVdCcC, DPFou. t(1=) 12 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
1805 MHz 1840 MHz 1880 MHz
28.5 42.7 –37.4 28.4 43.8 –37.8 28.1 43.1 –34.
A2I20H060GNR1 Datasheet
