MCZ33285 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Advance Information Document Number: MC33285 Rev. 5.0, 2/2007 Dual High-Side TMOS Driver A single input controls the 33285 in driving two external high-side NChannel TMOS power FETs controlling incandescent or inductive loads. Pulse Width Modulated (PWM) input control to 1.0 k Hz is possible. The 33285 contains a mon internal charge pump used to enhance the Gate voltage of both FETs. An external charge capacitor provides access to the charge pump output. Both external FETs are protected against inductive load transients by separate internal source-to-gate dynamic clamps. The power FETs are protected by the 33285 with short-circuit delay time of 800 µs. The device is designed to withstand reverse polarity battery and load dump transients, encountered in automotive applications. Features - PWM Capability - Power TMOS Number One (OUT1) Short-Circuit Detection and Short-Circuit Protection - Voltage Range 7.0 V ≤ 40 V - Extended Temperature Range from -40°C ≤ 125°C - Load Dump Protected - Overvoltage Detection and Activation of OUT2 During Overvoltage - Single Input Control for Both Output Stages - Capacitor Value of 100 n F Connected to Pin CP - Analog Input Control Measurement Detection - OUT1 LOAD Leakage Measurement Detection - Pb-Free Packaging Designated by Suffix Code EF HIGH-SIDE TMOS DRIVER D SUFFIX EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN ORDERING INFORMATION Device MC33285D/R2 MCZ33285EF/R2 Temperature Range (TA) -40°C to 125°C Package 8 SOICN VCC CP OUT2 DRN VPWR Input Control IN GND OUT1 SRC Motor Figure 1. 33285 Simplified Application Diagram - This document contains certain information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2007. All rights reserved. INTERNAL BLOCK...