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MD7P19130HSR3 - RF Power Field Effect Transistors

Download the MD7P19130HSR3 datasheet PDF. This datasheet also covers the MD7P19130HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Short Ferrite Bead 47 μF, 50 V Electrolytic Capacitor 100 μF, 50 V Electrolitic Capacitor 1.0 μF Chip Capacitor 0.1 μF Chip Capacitors 11 pF Chip Capacitors 13 pF Chip Capacitor 8.2 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitor 470 μF, 63 V Electrolytic Capacitor 10 μF, 50 V Chip Capacitor 10 Ω,

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MD7P19130HR3 MD7P19130HSR3 1930 - 1990 MHz, 40 W AVG. , 28 V SINGLE W - CDMA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MD7P19130HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MD7P19130HR3 RF Power Field Effect Transistors
MD7IC18120GNR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC18120NR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NBR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 0, 5/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 30% Device Output Signal PAR — 6 dB @ 0.