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MDE6IC7120GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Datasheet Summary

Description

0.01 μF, 50 V Chip Capacitors 1.0 μF, 35 V Chip Capacitors 68 pF Chip Capacitors 10 μF, 35 V Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 18 pF Chip Capacitors 1.0 pF Chip Capacitors 8.2 pF Chip Capacitors 50 Ω, 3 dB Hybrid Coupler 50 Ω, 10 W Termination 4.3 KΩ, 1/4 W Chip Resistors 0.020″,

Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Complian.

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Datasheet preview – MDE6IC7120GNR1

Datasheet Details

Part number MDE6IC7120GNR1
Manufacturer Freescale Semiconductor
File Size 550.43 KB
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet download datasheet MDE6IC7120GNR1 Datasheet
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Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 35.0 34.4 33.8 PAE (%) 42.0 40.6 39.1 Output PAR (dB) 6.2 6.8 6.9 ACPR (dBc) - 39.0 - 41.3 - 37.
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