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MHE1003N - RF Power LDMOS Transistor

Features

  • Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
  • Internally pre--matched for ease of use.
  • Qualified for operation up to 28 Vdc.
  • Integrated ESD protection.
  • 150C case operating temperature.
  • 225C die temperature capability Target.

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Datasheet preview – MHE1003N

Datasheet Details

Part number MHE1003N
Manufacturer Freescale Semiconductor
File Size 353.53 KB
Description RF Power LDMOS Transistor
Datasheet download datasheet MHE1003N Datasheet
Additional preview pages of the MHE1003N datasheet.

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    Full PDF Text Transcription

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    Freescale Semiconductor Technical Data Document Number: MHE1003N Rev. 0, 7/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band. Typical Performance: VDD = 26 Vdc, IDQ = 50 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 14.0 61.5 230 2450 13.9 62.0 224 2500 11.5 61.
    Published: |