• Part: MHE1003N
  • Description: RF Power LDMOS Transistor
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 353.53 KB
MHE1003N Datasheet (PDF) Download
Freescale Semiconductor
MHE1003N

Key Features

  • Characterized with series equivalent large--signal impedance parameters and mon source S--parameters
  • Internally pre--matched for ease of use
  • Qualified for operation up to 28 Vdc
  • Integrated ESD protection
  • 150C case operating temperature
  • 225C die temperature capability Target Applications
  • Consumer cooki