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MHE1003N Datasheet Rf Power Ldmos Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MHE1003N Rev. 0, 7/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed for consumer and mercial cooking applications operating in the 2450 MHz ISM band. Typical Performance: VDD = 26 Vdc, IDQ = 50 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 14.0 61.5 230 2450 13.9 62.0 224 2500 11.5 61.

Key Features

  • Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
  • Internally pre--matched for ease of use.
  • Qualified for operation up to 28 Vdc.
  • Integrated ESD protection.
  • 150C case operating temperature.
  • 225C die temperature capability Target.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description

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