• Part: MMG3009NT1
  • Description: Heterojunction Bipolar Transistor
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 408.30 KB
Download MMG3009NT1 Datasheet PDF
Freescale Semiconductor
MMG3009NT1
MMG3009NT1 is Heterojunction Bipolar Transistor manufactured by Freescale Semiconductor.
Features - Frequency: 0 to 6000 MHz - P1d B: 18 d Bm @ 900 MHz - Small--Signal Gain: 15 d B @ 900 MHz - Third Order Output Intercept Point: 34 d Bm @ 900 MHz - Single 5 V Supply - Internally Matched to 50 Ohms - Cost--effective SOT--89 Surface Mount Plastic Package - In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3009NT1 Rev. 7, 9/2014 0--6000 MHz, 15 d B 18 d Bm In Ga P HBT GPA SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 3500 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 15 14 12.5 d B Input Return Loss (S11) IRL --13 --26 --22 d B Output Return Loss (S22) ORL --17 --15 --24 d B Power Output @1d B P1d B 18 18 17.5 d Bm pression Third Order Output Intercept Point OIP3 34 32 1. VCC = 5 Vdc, TA = 25C, 50 ohm system. 31 d Bm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol Value Pin Tstg --65 to +150 Unit V m A d Bm C C Table 3. Thermal Characteristics Characteristic Symbol...