MMG3009NT1 - Heterojunction Bipolar Transistor

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MMG3009NT1
Manufacturer	Freescale Semiconductor
File Size	408.30 KB
Description	Heterojunction Bipolar Transistor
Datasheet	MMG3009NT1 Datasheet
Additional preview pages of the MMG3009NT1 datasheet.

Product details

Description

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 2 123 Figure 1. Functional Diagram Class 1A A IV Rating Package Peak Temperature Unit 1 260 C MMG3009NT1 2 RF Device Data Freescale Semiconductor, Inc.LA

Features

Frequency: 0 to 6000 MHz.
P1dB: 18 dBm @ 900 MHz.
Small--Signal Gain: 15 dB @ 900 MHz.
Third Order Output Intercept Point: 34 dBm @ 900 MHz.
Single 5 V Supply.
Internally Matched to 50 Ohms.
Cost--effective SOT--89 Surface Mount Plastic Package.
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3009NT1 Rev. 7, 9/2014 MMG3009NT1 0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1).

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Published: Jan 27, 2007 |