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MMG3014NT1 - Heterojunction Bipolar Transistor

General Description

Figure 1.

Table 6.

Table 7.

Key Features

  • Frequency: 40--4000 MHz.
  • P1dB: 25 dBm @ 900 MHz.
  • Small--Signal Gain: 19.5 dB @ 900 MHz.
  • Third Order Output Intercept Point: 40.5 dBm @ 900 MHz.
  • Single 5 V Supply.
  • Active Bias.
  • Cost--effective SOT--89 Surface Mount Plastic Package.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3014NT1 Rev. 5, 3/2016 MMG3014NT1 40--4000 MHz, 19.5 dB 25 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characterist.

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is input and output internally prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 4000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features  Frequency: 40--4000 MHz  P1dB: 25 dBm @ 900 MHz  Small--Signal Gain: 19.5 dB @ 900 MHz  Third Order Output Intercept Point: 40.5 dBm @ 900 MHz  Single 5 V Supply  Active Bias  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel.