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Freescale Semiconductor Technical Data
Document Number: MML09212H Rev. 2, 9/2014
Enhancement Mode pHEMT Technology (E--pHEMT)
Low Noise Amplifier
The MML09212H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W--CDMA and LTE.
Features
Low Noise Figure: 0.52 dB @ 900 MHz Frequency: 400--1400 MHz Unconditionally Stable Over Temperature High Reverse Isolation: --58 dB @ 900 MHz P1dB: 22.
MML09212HT1 Datasheet
